MJE13009G datasheet(1/10 Pages) ONSEMI

Part #	MJE13009G

Description	12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS ??100 WATTS

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Manufacturer	ONSEMI [ON Semiconductor]

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February, 2006 − Rev. 7

1

Publication Order Number:

MJE13009/D

MJE13009

Preferred Device

SWITCHMODEt Series

NPN Silicon Power

Transistors

The MJE13009 is designed for high−voltage, high−speed power

switching inductive circuits where fall time is critical. They are

particularly suited for 115 and 220 V SWITCHMODE applications

such as Switching Regulators, Inverters, Motor Controls,

Solenoid/Relay drivers and Deflection circuits.

Features

• VCEO(sus) 400 V and 300 V

• Reverse Bias SOA with Inductive Loads @ TC = 100_C

• Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C tc @ 8 A,

100

_C is 120 ns (Typ)

• 700 V Blocking Capability

• SOA and Switching Applications Information

• Pb−Free Package is Available*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

VCEO(sus)

400

Vdc

Collector−Emitter Voltage

VCEV

700

Vdc

Emitter−Base Voltage

VEBO

9

Vdc

Collector Current

− Continuous

− Peak (Note 1)

IC

ICM

12

24

Adc

Base Current

− Continuous

− Peak (Note 1)

IB

IBM

6

12

Adc

Emitter Current

− Continuous

− Peak (Note 1)

IE

IEM

18

36

Adc

Total Device Dissipation @ TC = 25_C

Derate above 25

°C

PD

2

16

W

W/

_C

Total Device Dissipation @ TC = 25_C

Derate above 25

°C

PD

100

800

W

W/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

−65 to

+150

_C

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max

Unit

Thermal Resistance, Junction−to−Ambient

RqJA

62.5

_C/W

Thermal Resistance, Junction−to−Case

RqJC

1.25

_C/W

Maximum Lead Temperature for Soldering

Purposes 1/8

″ from Case for 5 Seconds

TL

275

_C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle

≤ 10%.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

12 AMPERE

NPN SILICON

POWER TRANSISTOR

400 VOLTS − 100 WATTS

TO−220AB

CASE 221A−09

STYLE 1

1

http://onsemi.com

MARKING DIAGRAM

2

3

MJE13009G

AY WW

A

= Assembly Location

Y

= Year

WW = Work Week

G

= Pb−Free Package

Device

Package

Shipping

ORDERING INFORMATION

MJE13009

TO−220

50 Units / Rail

MJE13009G

TO−220

(Pb−Free)

50 Units / Rail

Preferred devices are recommended choices for future use

and best overall value.

Similar Part No. - MJE13009G

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	MJE13009G	195Kb / 10P	NPN Silicon Power Transistors August, 2010 ??Rev. 9
Unisonic Technologies	MJE13009G-K-T3P-T	445Kb / 9P	SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS
	MJE13009G-K-T3P-T	440Kb / 9P	SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS
	MJE13009G-K-TA3-T	445Kb / 9P	SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS
	MJE13009G-K-TA3-T	440Kb / 9P	SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS

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