MJE15028_06 datasheet(3/6 Pages) ONSEMI

Part #	MJE15028

Description	8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120??50 VOLTS, 50 WATTS

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MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP)

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3

t, TIME (ms)

0.01

0.05

1.0

2.0

5.0

10

20

50

500

1.0 k

0.1

0.5

0.2

1.0

0.2

0.1

0.05

ZqJC(t) = r(t) RqJC

RqJC = 1.56°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) ZqJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

0.2

SINGLE PULSE

Figure 2. Thermal Response

0.5

D = 0.5

0.05

0.3

0.7

0.07

0.03

0.02

100

200

0.1

0.02

0.01

20

2.0

Figure 3. Forward Bias Safe Operating Area

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

16

10

0.02

20

120

BONDING WIRE LIMITED

THERMALLY LIMITED

SECOND BREAKDOWN

LIMITED @ TC = 25°C

dc

100 ms

5.0

10

150

1.0

50

0.1

5ms

MJE15028

MJE15029

MJE15030

MJE15031

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation, i.e., the transistor must not be subjected to greater

dissipation then the curves indicate.

The data of Figures 3 and 4 is based on TJ(pk) = 150_C;

TC is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk)

< 150

_C. TJ(pk) may be calculated from the data in Figure 2.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown.

8.0

0

Figure 4. Reverse−Bias Switching

Safe Operating Area

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

5.0

0

120

140

5 V

VBE(off) = 9 V

100

110

150

3.0

130

2.0

1.0

VR, REVERSE VOLTAGE (VOLTS)

10

150

500

1000

50

Figure 5. Capacitances

200

100

30

10

7.0

5.0

1.5

3.0

20

50

IC/IB = 10

TC = 25°C

3 V

1.5 V

Cib (NPN)

Cob (PNP)

100

30

0 V

Cib (PNP)

Cob (NPN)

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