MJH6284 datasheet(3/5 Pages) ONSEMI

Part #	MJH6284

Description	DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 100 VOLTS, 160 WATTS

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Manufacturer	ONSEMI [ON Semiconductor]

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MJH6284 (NPN), MJH6284 (PNP)

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3

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.03

0.7

0.2

0.1

0.05

0.02

0.05

1.0

3.0

5.0

10

30

50

100

300

500

RqJC(t) = r(t) RqJC

RqJC = 0.78°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) RqJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

SINGLE PULSE

0.1

0.5

0.2

1000

0.5

0.3

0.07

0.03

0.01

0.02

2.0

20

200

0.3

0.2

0.1

0.05

0.02

0.01

Figure 5. MJH6284, MJH6287

TJ = 150°C

dc

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

2.0

50

2.0

0.1

5.0

10

0.5

50

0.2

5.0

20

1.0

20

100

0.05

0.5 ms

1.0 ms

5.0 ms

0.1 ms

FBSOA, FORWARD BIAS SAFE OPERATING AREA

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMAL LIMITATION

@TC = 25°C (SINGLE PULSE)

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

0

50

60

10

20

80

40

10

DUTY CYCLE = 10%

30

20

30

110

100

0

Figure 6. Maximum RBSOA, Reverse Bias

Safe Operating Area

L = 200

mH

IC/IB ≥ 100

TC = 25°C

VBE(off) = 0−5.0 V

RBE = 47 W

FORWARD BIAS

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 150_C. TJ(pk) may be calculated from the data in

Figure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

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