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MJW21191G Datasheet(PDF) 2 Page - ON Semiconductor |
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MJW21191G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page MJW21192 (NPN), MJW21191 (PNP) http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 10 mAdc, IB = 0) VCEO(sus) 150 − Vdc Collector Cutoff Current (VCB = 250 Vdc, IE = 0) ICES − 10 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 10 mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 4.0 Adc, VCE = 2.0 Vdc) (IC = 8.0 Adc, VCE = 2.0 Vdc) hFE 15 5.0 100 − − Collector−Emitter Saturation Voltage (IC = 4.0 Adc, IB = 0.4 Adc) (IC = 8.0 Adc, IB = 1.6 Adc) VCE(sat) − − 1.0 2.0 Vdc Base−Emitter On Voltage (IC = 4.0 Adc, VCE = 2.0 Vdc) VBE(on) − 2.0 Vdc DYNAMIC CHARACTERISTICS Current Gain − Bandwidth Product (Note 2) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 4.0 − MHz 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 2. fT = ⎪hfe⎪• ftest. ZθJC(t) = r(t) RθJC RθJC = 1.65°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) ZθJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 Figure 2. Thermal Response t, TIME (s) 1.0 0.1 D = 0.5 0.00001 0.0001 0.001 0.01 0.1 1.0 10 0.2 0.05 0.02 0.01 100 1000 0.01 0.1 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation then the curves indicate. The data of Figures 3 and 4 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150 _C. TJ(pk) may be calculated from the data in Figure 2. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. |
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