MLD1N06CLT4 datasheet(2/7 Pages) ONSEMI

Part #	MLD1N06CLT4

Description	SMARTDISCRETES TM MOSFET 1 Amp, 62 Volts, Logic Level N?묬hannel DPAK

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MLD1N06CL

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UNCLAMPED DRAIN−TO−SOURCE AVALANCHE CHARACTERISTICS

Rating

Symbol

Value

Unit

Single Pulse Drain−to−Source Avalanche Energy Starting TJ = 25°C

EAS

80

mJ

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Internally Clamped)

(ID = 20 mAdc, VGS = 0 Vdc)

(ID = 20 mAdc, VGS = 0 Vdc, TJ = 150°C)

V(BR)DSS

59

62

65

Vdc

Zero Gate Voltage Drain Current

(VDS = 45 Vdc, VGS = 0 Vdc)

(VDS = 45 Vdc, VGS = 0 Vdc, TJ = 150°C)

IDSS

−

0.6

6.0

5.0

20

mAdc

Gate−Source Leakage Current

(VG = 5.0 Vdc, VDS = 0 Vdc)

(VG = 5.0 Vdc, VDS = 0 Vdc, TJ = 150°C)

IGSS

−

0.5

1.0

5.0

20

mAdc

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

(ID = 250 mAdc, VDS = VGS)

(ID = 250 mAdc, VDS = VGS, TJ = 150°C)

VGS(th)

1.0

0.6

1.5

−

2.0

1.6

Vdc

Static Drain−to−Source On−Resistance

(ID = 1.0 Adc, VGS = 4.0 Vdc)

(ID = 1.0 Adc, VGS = 5.0 Vdc)

(ID = 1.0 Adc, VGS = 4.0 Vdc, TJ = 150°C)

(ID = 1.0 Adc, VGS = 5.0 Vdc, TJ = 150°C)

RDS(on)

−

0.63

0.59

1.1

1.0

0.75

1.9

1.8

W

Static Source−to−Drain Diode Voltage (IS = 1.0 Adc, VGS = 0 Vdc)

VSD

−

1.1

1.5

Vdc

Static Drain Current Limit

(VGS = 5.0 Vdc, VDS = 10 Vdc)

(VGS = 5.0 Vdc, VDS = 10 Vdc, TJ = 150°C)

ID(lim)

2.0

1.1

2.3

1.3

2.75

1.8

Adc

Forward Transconductance (ID = 1.0 Adc, VDS = 10 Vdc)

gFS

1.0

1.4

−

mhos

RESISTIVE SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

(VDD = 25 Vdc, ID = 1.0 Adc,

VGS(on) = 5.0 Vdc, RGS = 50 W)

td(on)

−

1.2

2.0

ns

Rise Time

tr

−

4.0

6.0

Turn−Off Delay Time

td(off)

−

4.0

6.0

Fall Time

tf

−

3.0

5.0

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from drain lead 0.25

″ from package to center of die)

LD

−

4.5

−

nH

Internal Source Inductance

(Measured from the source lead 0.25

″ from package to source bond pad)

LS

−

7.5

−

nH

3. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperature.

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