MLP2N06CL datasheet(1/7 Pages) ONSEMI

Part #	MLP2N06CL

Description	SMARTDISCRETES TM MOSFET 2 Amps, 62 Volts, Logic Level N?묬hannel TO??20

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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January, 2006 − Rev. 2

1

Publication Order Number:

MLP2N06CL/D

MLP2N06CL

Preferred Device

SMARTDISCRETESt MOSFET

2 Amps, 62 Volts, Logic Level

N−Channel TO−220

This logic level power MOSFET features current limiting for short

circuit protection, integrated Gate−Source clamping for ESD

protection and integral Gate−Drain clamping for over−voltage

protection and Sensefet technology for low on−resistance. No

additional gate series resistance is required when interfacing to the

output of a MCU, but a 40 k

W gate pulldown resistor is recommended

to avoid a floating gate condition.

The internal Gate−Source and Gate−Drain clamps allow the device

to be applied without use of external transient suppression

components. The Gate−Source clamp protects the MOSFET input

from electrostatic voltage stress up to 2.0 kV. The Gate−Drain clamp

protects the MOSFET drain from the avalanche stress that occurs with

inductive loads. Their unique design provides voltage clamping that is

essentially independent of operating temperature.

Features

• Pb−Free Package is Available*

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

Clamped

Vdc

Drain−to−Gate Voltage (RGS = 1.0 MW)

VDGR

Clamped

Vdc

Gate−to−Source Voltage − Continuous

VGS

±10

Vdc

Drain Current − Continuous @ TC = 25°C

ID

Self−Limited

Adc

Total Power Dissipation @ TC = 25°C

PD

40

W

Electrostatic Voltage

ESD

2.0

kV

Operating and Storage Junction

Temperature Range

TJ, Tstg

–50 to 150

_C

THERMAL CHARACTERISTICS

Maximum Junction Temperature

TJ(max)

150

_C

Thermal Resistance, Junction−to−Case

RqJC

3.12

_C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8

″ from case for 5 seconds

TL

260

_C

DRAIN−TO−SOURCE AVALANCHE CHARACTERISTICS

Single Pulse Drain−to−Source Avalanche

Energy (Starting TJ = 25°C, ID = 2.0 A,

L = 40 mH)

EAS

80

mJ

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

2 AMPERES

62 VOLTS (Clamped)

RDS(on) = 400 mW

Preferred devices are recommended choices for future use

and best overall value.

Device

Package

Shipping

ORDERING INFORMATION

MLP2N06CL

TO−220AB

50 Units / Rail

TO−220AB

CASE 221A

STYLE 5

1

2

3

4

A

= Location Code

Y

= Year

WW

= Work Week

G

= Pb−Free Package

MLP2N06CLG

AYWW

http://onsemi.com

MLP2N06CLG

TO−220AB

(Pb−Free)

50 Units / Rail

D

G

S

R1

R2

N−Channel

1

Gate

3

Source

4

Drain

2

Drain

MARKING DIAGRAM

AND PIN ASSIGNMENT

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