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MMBFJ310LT1G Datasheet(PDF) 1 Page - ON Semiconductor |
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MMBFJ310LT1G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 5 page © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 3 1 Publication Order Number: MMBFJ309LT1/D MMBFJ309LT1, MMBFJ310LT1 JFET − VHF/UHF Amplifier Transistor N−Channel Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage VGS 25 Vdc Gate Current IG 10 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25 °C PD 225 1.8 mW mW/ °C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. http://onsemi.com SOT−23 (TO−236) CASE 318 STYLE 10 Device Package Shipping† ORDERING INFORMATION MMBFJ309LT1 SOT−23 3,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MMBFJ309LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel 1 2 3 MMBFJ310LT1 SOT−23 3,000 / Tape & Reel MMBFJ310LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel *Date Code orientation and/or overbar may vary depending upon manufacturing location. 1 6x M G G 6x = Device Code x = U for MMBFJ309LT1 x = T for MMBFJ310LT1 M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) MARKING DIAGRAM 2 SOURCE 3 GATE 1 DRAIN |
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