MMBFU310LT1 datasheet(3/4 Pages) ONSEMI

Part #	MMBFU310LT1

Description	JFET Transistor N-Channel

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MMBFU310LT1

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ID, DRAIN CURRENT (mA)

100 k

10 k

1.0 k

100

1.0 k

100

10

1.0

0.01

0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100

VGS(off) = −2.3 V =

VGS(off) = −5.7 V =

Figure 3. Common−Source Output Admittance

and Forward Transconductance vs Drain Current

Yfs

Yos

VGS, GATE SOURCE VOLTAGE (VOLTS)

5.0

4.0

3.0

2.0

1.0

0

6.0

7.0

8.0

9.0

10

7.0

4.0

1.0

0

120

96

72

48

24

0

RDS

Cgs

Cgd

Figure 4. On Resistance and Junction

Capacitance vs Gate−Source Voltage

30

24

18

12

6.0

0

1000

100

200

300

500

700

f, FREQUENCY (MHz)

3.0

2.4

1.8

1.2

0.6

|S21|, |S11|

0.45

0.39

0.33

0.27

0.21

0.15

0.85

0.79

0.73

0.67

0.61

0.55

|S12|, |S22|

0.060

0.048

0.036

0.024

0.012

1.00

0.98

0.96

0.94

0.92

0.90

1000

100

200

300

500

700

f, FREQUENCY (MHz)

Figure 5. Common−Gate Y Parameter

Magnitude vs Frequency

Figure 6. Common−Gate S Parameter

Magnitude vs Frequency

VDS = 10 V

ID = 10 mA

TA = 25°C

Y11

Y21

Y22

Y12

S22

S21

S11

S12

VDS = 10 V

ID = 10 mA

TA = 25°C

f, FREQUENCY (MHz)

q21, q11

50

°

40

°

30

°

20

°

10

°

0

°

180

°

170

°

160

°

150

°

140

°

130

°

q12, q22

−2 0

°

−40

°

−80

°

−120

°

−160

°

−200

°

−20

°

−60

°

−100

°

−140

°

−180

°

87

°

86

°

85

°

84

°

83

°

82

°

1000

100

200

300

500

700

Figure 7. Common−Gate Y Parameter

Phase−Angle vs Frequency

f, FREQUENCY (MHz)

q11, q12

120

°

100

°

80

°

60

°

40

°

20

°

−20

°

−40

°

−60

°

−80

°

−100

°

−120

°

q21, q22

0

−40

°

−80

°

−20

°

−60

°

−100

°

1000

100

200

300

500

700

Figure 8. S Parameter Phase−Angle

vs Frequency

q22

q21

q12

q11

VDS = 10 V

ID = 10 mA

TA = 25°C

q11

q21

q22

q21

q11

q12

VDS = 10 V

ID = 10 mA

TA = 25°C

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