© Semiconductor Components Industries, LLC, 2006

January, 2006 − Rev. 4

1

Publication Order Number:

MMBT489LT1/D

MMBT489LT1

High Current Surface Mount

NPN Silicon Switching

Transistor for Load

Management in

Portable Applications

Features

Rating

Symbol

Max

Unit

Collector-Emitter Voltage

30

Vdc

Collector-Base Voltage

50

Vdc

Emitter-Base Voltage

5.0

Vdc

Collector Current − Continuous

1.0

A

Collector Current − Peak

2.0

A

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation (Note 1)

Derate above 25

°C

310

2.5

mW

mW/

°C

Thermal Resistance, Junction−to−Ambient

(Note 1)

403

°C/W

Total Device Dissipation (Note 2)

Derate above 25

°C

710

5.7

mW

mW/

°C

Thermal Resistance, Junction−to−Ambient

(Note 2)

176

°C/W

Total Device Dissipation (Single Pulse < 10 s)

575

mW

Junction and Storage Temperature Range

−55 to +150

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR− 4 @ Minimum Pad

2. FR− 4 @ 1.0 X 1.0 inch Pad

Device

Package

ORDERING INFORMATION

MMBT489LT1

SOT−23

3000/Tape & Reel

COLLECTOR

3

1

BASE

2

EMITTER

30 VOLTS, 2.0 AMPERES

NPN TRANSISTOR

SOT−23 (TO−236)

CASE 318

STYLE 6

3

2

1

http://onsemi.com

MMBT489LT1

SOT−23

3000/Tape & Reel

MMBT489LT1G

SOT−23

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

1

N3 M

G

G

N3 = Specific Device Code

M

= Date Code*

G

= Pb−Free Package

(Note: Microdot may be in either location)

MARKING DIAGRAM