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MMBT2132T3_06 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. MMBT2132T3_06
Description  General Purpose Transistors NPN Bipolar Junction Transistor
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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MMBT2132T3
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Base Breakdown Voltage
(IC = 100 mAdc)
V(BR)CBO
40
Vdc
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc)
V(BR)CEO
30
Vdc
Emitter−Base Breakdown Voltage
(IE = 100 mAdc)
V(BR)EBO
5.0
Vdc
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0 Adc)
(VCB = 25 Vdc, IE = 0 Adc, TA = 125°C)
ICBO
1.0
10
mAdc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0 Adc)
IEBO
10
mAdc
ON CHARACTERISTICS
DC Current Gain
(VCE = 3.0 Vdc, IC = 100 mAdc)
hFE
150
Vdc
Collector −Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
0.25
Vdc
Collector −Emitter Saturation Voltage
(IC = 700 mAdc, IB = 70 mAdc)
VCE(sat)
0.4
Vdc
Base−Emitter Saturation Voltage
(IC = 700 mAdc, IB = 70 mAdc)
VBE(sat)
1.1
Vdc
Collector−Emitter Saturation Voltage
(IC = 700 mAdc, VCE = 1.0 Vdc)
VBE(on)
1.0
Vdc
Figure 1. Collector Saturation Region
Figure 2. Collector Saturation Region
Figure 3. DC Current Gain
Figure 4. “ON” Voltages
0.1
0.000001
IB, BASE CURRENT (A)
0.3
0.2
1.0
0.01
IC, COLLECTOR CURRENT (A)
1000
100
IC, COLLECTOR CURRENT (A)
0.001
1.0
0.1
0.001
0.01
0.1
0
0.0001
0.001
0.01
0.1
0.1
1.0
IC = 1.0 mA
0.7 A
0.00001
0.1
0.000001
IB, BASE CURRENT (A)
0.1
0
0.0001
0.001
0.01
IC = 1.0 mA
0.00001
VCE = 3.0 V
10 mA
0.1 A
0.5 A
10 mA
0.1 A
−40°C
150°C
25°C
VBE(sat)
VCE(sat)
IC/IB = 10
0.01




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