MMBTA64LT1G datasheet(2/4 Pages) ONSEMI

Part #	MMBTA64LT1G

Description	Darlington Transistors PNP Silicon

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Manufacturer	ONSEMI [ON Semiconductor]

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MMBTA63LT1, MMBTA64LT1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage

(IC = −100 mAdc)

V(BR)CEO

−30

−

Vdc

Collector Cutoff Current

(VCB = −30 Vdc)

ICBO

−

−100

nAdc

Emitter Cutoff Current

(VEB = −10 Vdc)

IEBO

−

−100

nAdc

ON CHARACTERISTICS

DC Current Gain (Note 3)

(IC = −10 mAdc, VCE = −5.0 Vdc)

MMBTA63

(IC = −10 mAdc, VCE = −5.0 Vdc)

MMBTA64

(IC = −100 mAdc, VCE = −5.0 Vdc)

MMBTA63

(IC = −100 mAdc, VCE = −5.0 Vdc)

MMBTA64

hFE

5,000

10,000

20,000

−

Collector −Emitter Saturation Voltage

(IC = −100 mAdc, IB = −0.1 mAdc)

VCE(sat)

−

−1.5

Vdc

Base − Emitter On Voltage

(IC = −100 mAdc, VCE = −5.0 Vdc)

VBE(on)

−

−2.0

Vdc

SMALL− SIGNAL CHARACTERISTICS

Current −Gain − Bandwidth Product

(IC = −10 mAdc, VCE = −5.0 Vdc, f = 100 MHz)

fT

125

−

MHz

3. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2.0%.

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