MMBV3700LT1G datasheet(2/4 Pages) ONSEMI

Part #	MMBV3700LT1G

Description	High Voltage Silicon Pin Diodes

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Manufacturer	ONSEMI [ON Semiconductor]

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MMBV3700LT1, MPN3700

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage (IR = 10 mAdc)

V(BR)R

200

−

Vdc

Diode Capacitance (VR = 20 Vdc, f = 1.0 MHz)

CT

−

1.0

pF

Series Resistance (Figure 5) (IF = 10 mAdc)

RS

−

0.7

1.0

W

Reverse Leakage Current (VR = 150 Vdc)

IR

−

0.1

mAdc

Reverse Recovery Time (IF = IR = 10 mAdc)

trr

−

300

−

ns

TYPICAL CHARACTERISTICS

Figure 1. Series Resistance

Figure 2. Forward Voltage

VF, FORWARD VOLTAGE (VOLTS)

Figure 3. Diode Capacitance

TA, AMBIENT TEMPERATURE (°C)

Figure 4. Leakage Current

500

400

1.0

100

−60

0.01

0.001

0+100

VR = 15 Vdc

+140

+60

+20

−20

0.1

1.0

10

3.2

2.4

1.6

0.8

0

4.0

12

14

16

IF, FORWARD CURRENT (mA)

2.8

2.0

1.2

0.4

TA = 25°C

2.0

6.0

8.0

10

300

200

100

0

0.8

0.9

0.7

TA = 25°C

VR, REVERSE VOLTAGE (VOLTS)

0.1

2.0

10

−40

6.0

4.0

1.0

0.4

0.6

0.2

0

−50

−10

−20

−30

TA = 25°C

0.04

0.004

4.0

40

0.4

600

700

800

8.0

0.8

ORDERING INFORMATION

Device

Package

Shipping†

MMBV3700LT1

SOT−23

3000 / Tape & Reel

MMBV3700LT1G

SOT−23

(Pb−Free)

3000 / Tape & Reel

MPN3700

TO−92

1000 Units / Bulk

MPN3700G

TO−92

(Pb−Free)

1000 Units / Bulk

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

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