MC74HCT244A

http://onsemi.com

2

MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

DC Supply Voltage (Referenced to GND)

– 0.5 to + 7

V

DC Input Voltage (Referenced to GND)

V

DC Output Voltage (Referenced to GND)

V

DC Input Current, per Pin

± 20

mA

DC Output Current, per Pin

± 35

mA

± 75

mA

Power Dissipation in Still Air,

Plastic DIP†

SOIC Package†

TSSOP Package†

750

500

450

mW

Storage Temperature

– 65 to + 150

_C

Lead Temperature, 1 mm from Case for 10 Seconds

(Plastic DIP, SOIC, SSOP or TSSOP Package)

260

_C

†Derating − Plastic DIP: – 10 mW/

_C from 65_ to 125_C

− SOIC Package: – 7 mW/

_C from 65_ to 125_C

− TSSOP Package: − 6.1 mW/

_C from 65_ to 125_C

For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

Min

Max

Unit

DC Supply Voltage (Referenced to GND)

4.5

5.5

V

DC Input Voltage, Output Voltage (Referenced to GND)

0

V

Operating Temperature, All Package Types

– 55

+ 125

_C

Input Rise and Fall Time (Figure 1)

0

500

ns

Symbol

Parameter

Test Conditions

V

Guaranteed Limit

Unit

– 55 to

25

_C

v 85_C

v 125_C

Minimum High−Level Input Voltage

4.5

5.5

2

2

2

2

2

2

V

Maximum Low−Level Input

Voltage

4.5

5.5

0.8

0.8

0.8

0.8

0.8

0.8

V

Minimum High−Level Output

Voltage

4.5

5.5

4.4

5.4

4.4

5.4

4.4

5.4

V

4.5

3.98

3.84

3.7

Maximum Low−Level Output

Voltage

4.5

5.5

0.1

0.1

0.1

0.1

0.1

0.1

V

4.5

0.26

0.33

0.4

Maximum Input Leakage Current

5.5

± 0.1

± 1.0

± 1.0

mA

Maximum Three−State Leakage

Current

Output in High−Impedance State

5.5

± 0.5

± 5.0

± 10

mA

Maximum Quiescent Supply

Current (per Package)

5.5

4

40

160

mA

Additional Quiescent Supply

Current

5.5

≥ −55_C

25

_C to 125_C

mA

2.9

2.4

1. Information on typical parametric values along with frequency or heavy load considerations can be found in Chapter 2 of the ON

Semiconductor High−Speed CMOS Data Book (DL129/D).

This device contains protection

circuitry to guard against damage

due to high static voltages or electric

fields. However, precautions must

be taken to avoid applications of any

voltage higher than maximum rated

voltages to this high−impedance cir-

range GND

Unused inputs must always be

tied to an appropriate logic voltage

Unused outputs must be left open.