MMDF1N05ER2G datasheet(2/5 Pages) ONSEMI

Part #	MMDF1N05ER2G

Description	Power MOSFET 1 Amp, 50 Volts N-Channel SO-8, Dual

Download	5 Pages

Scroll/Zoom	100%

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

Logo

2 / 5 page

MMDF1N05E

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0, ID = 250 mA)

V(BR)DSS

50

−

Vdc

Zero Gate Voltage Drain Current

(VDS = 50 V, VGS = 0)

IDSS

−

2

mAdc

Gate−Body Leakage Current

(VGS = 20 Vdc, VDS = 0)

IGSS

−

100

nAdc

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc)

VGS(th)

1.0

−

3.0

Vdc

Drain−to−Source On−Resistance

(VGS = 10 Vdc, ID = 1.5 Adc)

(VGS = 4.5 Vdc, ID = 0.6 Adc)

RDS(on)

−

0.30

0.50

W

Forward Transconductance (VDS = 15 V, ID = 1.5 A)

gFS

−

1.5

−

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 V, VGS = 0,

f = 1.0 MHz)

Ciss

−

330

−

pF

Output Capacitance

Coss

−

160

−

Reverse Transfer Capacitance

Crss

−

50

−

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

(VDD = 10 V, ID = 1.5 A, RL = 10 W,

VG = 10 V, RG = 50 W)

td(on)

−

20

ns

Rise Time

tr

−

30

Turn−Off Delay Time

td(off)

−

40

Fall Time

tf

−

25

Total Gate Charge

(VDS = 10 V, ID = 1.5 A,

VGS = 10 V)

Qg

−

12.5

−

nC

Gate−Source Charge

Qgs

−

1.9

−

Gate−Drain Charge

Qgd

−

3.0

−

SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C)

Forward Voltage (Note 2)

(IS = 1.5 A, VGS = 0 V)

(dIS/dt = 100 A/ms)

VSD

−

1.6

V

Reverse Recovery Time

trr

−

45

−

ns

2. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2.0%.

3. Switching characteristics are independent of operating junction temperature.

Similar Part No. - MMDF1N05ER2G

Manufacturer	Part #	Datasheet	Description
VBsemi Electronics Co.,...	MMDF1N05ER2G	1Mb / 9P	Dual N-Channel 60 V (D-S) 175 째C MOSFET
ON Semiconductor	MMDF1N05ER2G	211Kb / 7P	Power MOSFET 2 A, 50 V, N-Channel SO-8, Dual December, 2012 - Rev. 11

More results

Similar Description - MMDF1N05ER2G

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	MMDF1N05E	211Kb / 7P	Power MOSFET 2 A, 50 V, N-Channel SO-8, Dual December, 2012 - Rev. 11
	MMSF5N02HD	269Kb / 10P	N-Channel SO-8 Power MOSFET August, 2006 ??Rev. 7
	MMDFS6N303	252Kb / 11P	N-Channel SO-8 Power MOSFET August, 2006 ??Rev. 3
	MMDF3N02HD	127Kb / 12P	Power MOSFET 3 Amps, 20 Volts N-Channel SO-, DuaL November, 2000 ??Rev. 6
Solid States Devices, I...	SFF75N05M	53Kb / 2P	75 AMP 50 VOLTS 15mohm N-Channel Power MOSFET
ON Semiconductor	NTMD6P02R2	124Kb / 8P	Power MOSFET 6 Amps, 20 Volts P-Channel SO-8, Dual November, 2000 ??Rev. 1
Solid States Devices, I...	SFF130-5	173Kb / 2P	8 AMP / 100 Volts 0.18OHM N-Channel POWER MOSFET
Xian Semipower Electron...	SW7960U	592Kb / 6P	Dual N-channel Enhanced mode SO-8 MOSFET
Solid States Devices, I...	SFF440M	218Kb / 2P	8 AMP 500 Volts 0.85 OHM N-Channel POWER MOSFET
Solid States Devices, I...	SFF440-28	221Kb / 2P	8 AMP 500 Volts 0.88 OHM N-Channel POWER MOSFET

More results

MMDF1N05ER2G Datasheet(PDF) 2 Page - ON Semiconductor

MMDF1N05ER2G Datasheet(HTML) 2 Page - ON Semiconductor

Similar Part No. - MMDF1N05ER2G

Similar Description - MMDF1N05ER2G

Html Pages

1 2 3 4 5

Datasheet Download

Link URL