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MMJT9410 Datasheet(PDF) 4 Page - ON Semiconductor |
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MMJT9410 Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 5 page MMJT9410 http://onsemi.com 4 Figure 9. Current−Gain Bandwidth Product 10 0.1 IC, COLLECTOR CURRENT (AMP) 100 10 1.0 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 1.0 0.1 10 1.0 0.001 10 100 Figure 10. Active Region Safe Operating Area 0.01 0.1 VCE = 10 V ftest = 1.0 MHz TA = 25°C BONDING WIRE LIMIT THERMAL LIMIT (Single Pulse) SECONDARY BREAKDOWN LIMIT 0.5 ms 100 ms 5.0 ms Figure 11. Power Derating 150 25 T, TEMPERATURE ( °C) 4.0 3.0 2.0 1.0 0 50 75 100 125 TA TC There are two limitations on the power handling ability of a transistor: average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 10 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Secondary breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150°C. TJ(pk) may be calculated from the data in Figure 12. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. Figure 12. Thermal Response 0.01 0.1 0.0001 t, TIME (seconds) 1.0 0.1 0.01 0.0001 0.001 0.001 10 100 1.0 1000 D = 0.5 SINGLE PULSE 0.2 0.1 0.05 0.02 0.01 RqJA(t) = r(t) qJA qJA = 165°C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TA = P(pk) qJA(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 |
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