MMJT9410 datasheet(4/5 Pages) ONSEMI

Part #	MMJT9410

Description	Bipolar Power Transistors NPN Silicon

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MMJT9410

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Figure 9. Current−Gain Bandwidth Product

10

0.1

IC, COLLECTOR CURRENT (AMP)

100

10

1.0

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

1.0

0.1

10

1.0

0.001

10

100

Figure 10. Active Region Safe Operating Area

0.01

0.1

VCE = 10 V

ftest = 1.0 MHz

TA = 25°C

BONDING WIRE LIMIT

THERMAL LIMIT (Single Pulse)

SECONDARY BREAKDOWN LIMIT

0.5 ms

100 ms

5.0 ms

Figure 11. Power Derating

150

25

T, TEMPERATURE (

°C)

4.0

3.0

2.0

1.0

0

50

75

100

125

TA

TC

There are two limitations on the power handling ability of

a transistor: average junction temperature and secondary

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 10 is based on TJ(pk) = 150°C; TC is

variable depending on conditions. Secondary breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk)

v 150°C. TJ(pk) may be calculated from the data in

Figure 12. At high case temperatures, thermal limitations

will reduce the power that can be handled to values less than

the limitations imposed by secondary breakdown.

Figure 12. Thermal Response

0.01

0.1

0.0001

t, TIME (seconds)

1.0

0.1

0.01

0.0001

0.001

10

100

1.0

1000

D = 0.5

SINGLE PULSE

0.2

0.1

0.05

0.02

0.01

RqJA(t) = r(t) qJA

qJA = 165°C/W

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TA = P(pk) qJA(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

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