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MPS5179RLRAG Datasheet(PDF) 2 Page - ON Semiconductor |
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MPS5179RLRAG Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 3 page MPS5179 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector −Emitter Sustaining Voltage (IC = 3.0 mAdc, IB = 0) VCEO(sus) 12 − Vdc Collector −Base Breakdown Voltage (IC = 0.001 mAdc, IE = 0) V(BR)CBO 20 − Vdc Emitter −Base Breakdown Voltage (IE = 0.01 mAdc, IC = 0) V(BR)EBO 2.5 − Vdc Collector Cutoff Current (VCB = 15 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0, TA = 150°C) ICBO − − 0.02 1.0 mAdc ON CHARACTERISTICS DC Current Gain (IC = 3.0 mAdc, VCE = 1.0 Vdc) hFE 25 250 − Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) − 0.4 Vdc Base −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VBE(sat) − 1.0 Vdc SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (Note 1) (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 100 MHz) fT 900 2000 MHz Collector−Base Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 to 1.0 MHz) Ccb − 1.0 pF Small Signal Current Gain (IC = 2.0 mAdc, VCE = 6.0 Vdc, f = 1.0 kHz) hfe 25 300 − 1. fT is defined as the frequency at which |hfe| extrapolates to unity. |
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