S8050 datasheet(1/2 Pages) UTC | LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR

1 page

UTC S8050

NPN EPITAXIAL SILICON TRANSISTOR

UTC UNISONIC TECHNOLOGIES CO., LTD. 1

QW-R201-013,A

LOW VOLTAGE HIGH CURRENT

SMALL SIGNAL NPN

TRANSISTOR

DESCRIPTION

The UTC S8050 is a low voltage high current small

signal NPN transistor, designed for Class B push-pull

audio amplifier and general purpose applications.

FEATURES

*Collector current up to 700mA

*Collector-Emitter voltage up to 20 V

*Complementary to S8550

TO-92

1:EMITTER 2:BASE 3: COLLECTOR

ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified )

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

Collector Dissipation(Ta=25

°C)

Collector Current

700

Junction Temperature

150

°C

Storage Temperature

TSTG

-65 ~ +150

°C

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

BVCBO

Ic=100

µA,IE=0

Collector-Emitter Breakdown Voltage

BVCEO

Ic=1mA,IB=0

Emitter-Base Breakdown Voltage

BVEBO

IE=100

µA,Ic=0

Collector Cut-Off Current

ICBO

VCB=30V,IE=0

µA

Emitter Cut-Off Current

IEBO

VEB=5V,Ic=0

100

DC Current Gain(note)

hFE1

hFE2

hFE3

VCE=1V,Ic=1mA

VCE=1V,Ic=150 mA

VCE=1V,Ic=500mA

100

120

110

400

Collector-Emitter Saturation Voltage

VCE(sat)

Ic=500mA,IB=50mA

0.5

Base-Emitter Saturation Voltage

VBE(sat)

Ic=500mA,IB=50mA

1.2

Base-Emitter Saturation Voltage

VBE

VCE=1V,Ic=10mA

1.0

Current Gain Bandwidth Product

VCE=10V,Ic=50mA

100

MHz

Output Capacitance

Cob

VCB=10V,IE=0

f=1MHz

9.0

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