S8550 datasheet(2/2 Pages) UTC | LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR

2 page

UTC S8550

PNP EPITAXIAL SILICON TRANSISTOR

UTC UNISONIC TECHNOLOGIES CO., LTD. 2

QW-R201-014,A

CLASSIFICATION OF hFE2

RANK

RANGE

120-200

160-300

280-400

TYPICAL PERFORMANCE CHARACTERISTICS

Fig.1 Static characteristics

Collector-Emitter voltage ( V)

0.4

0.8

1.2

1.6

2.0

0.1

0.2

0.3

0.4

0.5

IB=0.5mA

IB=1.0mA

IB=1.5mA

IB=2.0mA

IB=2.5mA

IB=3.0mA

Fig.2 DC current Gain

Ic,Collector current (mA)

-1

VCE=1V

Fig.3 Base-Emitter on Voltage

-1

Base-Emitter voltage (V)

0.2

0.4

0.6

0.8

1.0

VCE=1V

Ic,Collector current (mA)

-1

Fig.4 Saturation voltage

Fig.5 Current gain-bandwidth

product

Fig.6 Collector output

Capacitance

VCE(sat)

VBE(sat)

Ic=10*IB

Ic,Collector current (mA)

VCE=10V

Collector-Base voltage (V)

f=1MHz

IE=0

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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

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