S8550 datasheet(1/2 Pages) UTC | LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR

1 page

UTC S8550

PNP EPITAXIAL SILICON TRANSISTOR

UTC UNISONIC TECHNOLOGIES CO., LTD. 1

QW-R201-014,A

LOW VOLTAGE HIGH CURRENT

SMALL SIGNAL PNP

TRANSISTOR

DESCRIPTION

The UTC S8550 is a low voltage high current small

signal

PNP transistor, designed for Class B push-pull

audio amplifier and general purpose applications.

FEATURES

*Collector current up to 700mA

*Collector-Emitter voltage up to 20 V

*Complementary to UTC S8050

TO-92

1:EMITTER 2:BASE 3: COLLECTOR

ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)

PARAMETERS

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

-30

Collector-Emitter Voltage

VCEO

-20

Emitter-Base Voltage

VEBO

-5

Collector Dissipation(Ta=25

°C)

Collector Current

-700

Junction Temperature

150

°C

Storage Temperature

TSTG

-65 ~ +150

°C

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

BVCBO

Ic=-100

µA,IE=0

-30

Collector-Emitter Breakdown Voltage

BVCEO

Ic=-1mA,IB=0

-20

Emitter-Base Breakdown Voltage

BVEBO

IE=-100

µA,Ic=0

-5

Collector Cut-Off Current

ICBO

VCB=-30V,IE=0

-1

µA

Emitter Cut-Off Current

IEBO

VEB=-5V,Ic=0

-100

DC Current Gain(note)

hFE1

hFE2

hFE3

VCE=-1V,Ic=-1mA

VCE=-1V,Ic=-150 mA

VCE=-1V,Ic=-500mA

100

120

110

400

Collector-Emitter Saturation Voltage

VCE(sat)

Ic=-500mA,IB=-50mA

-0.5

Base-Emitter Saturation Voltage

VBE(sat)

Ic=500mA,IB=-50mA

-1.2

Base-Emitter Saturation Voltage

VBE

VCE=-1V,Ic=-10mA

-1.0

Current Gain Bandwidth Product

VCE=-10V,Ic=-50mA

100

MHz

Output Capacitance

Cob

VCB=10V,IE=0

f=1MHz

9.0

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