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UF730-TA3-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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UF730-TA3-T Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 6 page UF730 MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-077,A ELECTRICAL CHARACTERISTICS(Cont.) SOURCE TO DRAIN DIODE SPECIFICATIONS Source to Drain Diode Voltage (Note 1) VSD TJ = 25℃, ISD = 5.5A, VGS = 0V 1.6 V Continuous Source to Drain Current IS 5.5 A Pulse Source to Drain Current (Note 2) ISM 22 A Reverse Recovery Time tRR TJ = 25℃, ISD = 5.5A, dISD/dt = 100A/µs 140 300 660 ns Reverse Recovery Charge QRR TJ = 25℃, ISD = 5.5A, dISD/dt = 100A/µs 0.93 2.1 4.3 µC Notes: 1. Pulse Test: Pulse width≤≤300µs, Duty Cycle≤≤2%. 2. Repetitive rating: Pulse width limited by maximum junction temperature. 3. VDD = 50V, starting TJ = 25℃, L = 17mH, RG = 25Ω, peak IAS = 5.5A. |
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