UF840

MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 8

www.unisonic.com.tw

QW-R502-047,C

PARAMETER

SYMBOL

RATINGS

UNIT

500

V

500

V

Gate to Source Voltage

±20

V

Continuous

8.0

A

Tc = 100℃

5.1

A

Drain Current

Pulsed

32

A

Total Power Dissipation (Ta = 25℃)

Derating above 25℃

125

1.0

W

W/℃

Single Pulse Avalanche Energy Rating

510

mJ

Operating Temperature Range

-55 ~ +150

℃

Storage Temperature Range

-55 ~ +150

℃

Note: 1.Signified recommend operating range that indicates conditions for which the device is intended to be

functional, but does not guarantee specific performance limits.

2.Absolute maximum ratings indicate limits beyond which damage to the device may occur.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Thermal Resistance Junction-Ambient

62.5

Thermal Resistance Junction-Case

1.0

℃

/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Drain to Source Breakdown Voltage

500

V

Gate to Threshold Voltage

2

4

V

On-State Drain Current (Note 1)

8

A

25

µA

Zero Gate Voltage Drain Current

250

µA

Gate to Source Leakage Current

±100

nA

Drain to Source On Resistance

(Note 1)

0.8 0.85

Ω

Forward Transconductance (Note 1)

4.9

7.4

S

Turn-On Delay Time

15

21

ns

Rise Time

21

35

ns

Turn-Off Delay Time

50

74

ns

Fall Time

(Note 2)

20

30

ns

Total Gate Charge

42

63

nC

Gate to Source Charge

7

nC

Gate to Drain “Miller” Charge

(Note 3)

22

nC

Input Capacitance

1225

pF

Output Capacitance

200

pF

Reverse - Transfer Capacitance

(Figure 17)

85

pF

NOTE : 1. Pulse Test: Pulse width≤300µs, Duty Cycle≤2%.

2. MOSFET Switching Times are Essentially Independent of Operating Temperature.

3. Gate Charge is Essentially Independent of Operating Temperature.