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MC74HC393AN Datasheet(PDF) 4 Page - ON Semiconductor |
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MC74HC393AN Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 11 page MC74HC393A http://onsemi.com 4 DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) Unit Guaranteed Limit VCC V Test Conditions Parameter Symbol Unit v 125_C v 85_C – 55 to 25_C VCC V Test Conditions Parameter Symbol VOL Maximum Low−Level Output Voltage Vin = VIH or VIL |Iout| v 20 mA 2.0 4.5 6.0 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 V Vin = VIH or VIL |Iout| v 2.4 mA |Iout| v 4.0 mA |Iout| v 5.2 mA 3.0 4.5 6.0 0.26 0.26 0.26 0.33 0.33 0.33 0.40 0.40 0.40 Iin Maximum Input Leakage Current Vin = VCC or GND 6.0 ± 0.1 ± 1.0 ± 1.0 mA ICC Maximum Quiescent Supply Current (per Package) Vin = VCC or GND Iout = 0 mA 6.0 4 40 160 mA NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D). AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns) Symbol Parameter VCC V Guaranteed Limit Unit – 55 to 25_C v 85_C v 125_C fmax Maximum Clock Frequency (50% Duty Cycle) (Figures 1 and 3) 2.0 3.0 4.5 6.0 10 15 30 50 9 14 28 45 8 12 25 40 MHz tPLH, tPHL Maximum Propagation Delay, Clock to Q1 (Figures 1 and 3) 2.0 3.0 4.5 6.0 70 40 24 20 80 45 30 26 90 50 36 31 ns tPLH, tPHL Maximum Propagation Delay, Clock to Q2 (Figures 1 and 3) 2.0 3.0 4.5 6.0 100 56 34 20 105 70 45 38 180 100 55 48 ns tPLH, tPHL Maximum Propagation Delay, Clock to Q3 (Figures 1 and 3) 2.0 3.0 4.5 6.0 130 80 44 37 150 105 55 47 180 130 70 58 ns tPLH, tPHL Maximum Propagation Delay, Clock to Q4 (Figures 1 and 3) 2.0 3.0 4.5 6.0 160 110 52 44 250 185 65 55 300 210 82 65 ns tPHL Maximum Propagation Delay, Reset to any Q (Figures 2 and 3) 2.0 3.0 4.5 6.0 80 48 30 26 95 65 38 33 110 75 50 43 ns tTLH, tTHL Maximum Output Transition Time, Any Output (Figures 1 and 3) 2.0 3.0 4.5 6.0 75 27 15 13 95 32 19 16 110 36 22 19 ns Cin Maximum Input Capacitance — 10 10 10 pF NOTES: 1. For propagation delays with loads other than 50 pF, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D). 2. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D). CPD Power Dissipation Capacitance (Per Counter)* Typical @ 25°C, VCC = 5.0 V pF 35 * Used to determine the no−load dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D). |
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