Philips Semiconductors

Product Specification

Insulated Gate Bipolar Transistor (IGBT)

BUK856-800A

MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

Fig.19. TO220AB; pin 2 connected to mounting base.

Notes

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent

damage to MOS gate oxide.

2. Refer to mounting instructions for TO220 envelopes.

3. Epoxy meets UL94 V0 at 1/8".

10,3

max

3,7

2,8

3,0

3,0 max

not tinned

1,3

max

(2x)

12 3

2,4

0,6

4,5

max

5,9

min

15,8

max

1,3

2,54 2,54

0,9 max (3x)

13,5

min

March 1993

6

Rev 1.000