2SB1132-P-TN3-R datasheet(3/4 Pages) UTC

Part #	2SB1132-P-TN3-R

Description	MEDIUM POWER TRANSISTOR

Download	4 Pages

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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3 / 4 page

2SB1132

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R208-016,B

TYPICAL CHARACTERISTICS

0

-0.2

-500

-1

Base to Emitter Voltage, VBE(V)

Grounded Emitter Propagation

Characteristics

-200

-1

-2

-5 -10 -20

200

50

Collector Current, Ic(mA)

DC Current Gain vs. Collector Current(Ⅰ)

100

-0.4 -0.6 -0.8

-1.6

-1.4

-1.2

-1.0

-2

-5

-10

VCE =-6V

Ta=100℃

Ta=25℃

Ta= -55℃

0

-500

0

Collector to Emitter Voltage, VCE(V)

Grounded Emitter Output

Characteristics

-100

-0.4

-0.8

-1.6

-2.0

-1.2

-200

-300

-400

-2.0

IB =0mA

Ta=25℃

-2.5

-1.5

-1.0

-0.5

-3.0

-3.5

-4.0

-4.5

-5.0

-50-100-200-500-1000

500

1000

Ta=25℃

VcE= -3V

VcE= -1V

-1

-2

-5 -10 -20

200

50

Collector Current :Ic(mA)

DC Current Gain vs.Collector Current (Ⅱ)

100

-50-100-200-500-1000

500

1000

VcE= -3V

Ta=100℃

Ta=25℃

Ta= -55℃

-1 -2

-5 -10-20

-0.05

-0.01

Collector Current, Ic(mA)

Collector-emitter Saturation Voltage vs.

Collector Current

-0.02

-50-100-200-500-1000

-0.1

-0.2

-2000

-0.5

-1

Ta=25℃

IC/IB=10

-1

-1.0

0

Base Current, IB(mA)

Collector Emitter Saturation Voltage vs.

Base Current

-0.2

-2

-5

-20

-50

-10

-0.4

-0.6

-0.8

-100

Ta=25℃

IC = -500mA

IC = -300mA

-20

-50

-100

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