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2SB1132L-Q-AB3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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2SB1132L-Q-AB3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 4 page 2SB1132 PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R208-016,B ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5 V Collector Current DC -1 A Collector Current (Single pulse, Pw=100ms) PULSE IC -2 A SOT-89 0.5 W Collector Power Dissipation TO-252 PC 1 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Base Breakdown Voltage BVCBO IC = -50µA -40 V Collector Emitter Breakdown Voltage BVCEO IC = -1mA -32 V Emitter Base Breakdown Voltage BVEBO IE= -50µA -5 V Collector Cut-Off Current ICBO VCB= -20V -0.5 µA Emitter Cut-Off Current IEBO VEB= -4V -0.5 µA Collector-Emitter Saturation Voltage VCE(SAT) IC = -500mA,IB= -50mA (Note) -0.2 -0.5 V DC Current Transfer Ratio hFE VCE= -3V,IC = -0.1A (Note) 82 390 Transition Frequency fT VCE= -5V, IE= 50 mA, f=30MHz 150 MHz Output Capacitance Cob VCB= -10V, IE= 0A,f=1MHz 20 30 pF Note: Measured using pulse current. CLASSIFICATION OF hFE RANK P Q R RANGE 82-180 120-270 180-390 |
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