2SB1260

PNP SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

2 of 4

www.unisonic.com.tw

QW-R208-017,C

PARAMETER

SYMBOL

RATINGS

UNIT

Collector -Base Voltage

-80

V

Collector -Emitter Voltage

-80

V

Emitter -Base Voltage

-5

V

-2

A

DC Collector Current

-1

A

SOT-89

0.5

W

Power Dissipation

TO-252

1.9

W

Operating Temperature

+150

℃

Storage Temperature

-40 ~ +150

℃

Note 1. Printed circuit board,1.7mm thick, collector copper plating 100mm

2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Base Breakdown Voltage

-80

V

Collector Emitter Breakdown Voltage

-80

V

Emitter Base Breakdown Voltage

-5

V

Collector Cut-Off Current

-1

μA

Emitter Cut-Off Current

-1

μA

DC Current Gain(Note 1)

82

390

Collector-Emitter Saturation Voltage

-0.4

V

Transition Frequency

100

MHz

Output Capacitance

Cob

25

pF

RANK

P

Q

R

RANGE

82 ~ 180

120 ~ 270

180 ~ 390