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2SB1260L-R-TN3-R Datasheet(PDF) 3 Page - Unisonic Technologies |
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2SB1260L-R-TN3-R Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page  2SB1260 PNP SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 3 of 4 www.unisonic.com.tw QW-R208-017,C ■ TYPICAL CHARACTERICS 0 -0.2 -1000 -0.1 Base to Emitter Voltage, VBE(V) Grounded Emitter Propagation Characteristics -1 -2 -5 -10 -20 200 50 Collector Current, Ic(mA) DC Current Gain vs. Collector Current 100 -0.4 -0.6 -0.8 -1.6 -1.4 -1.2 -1.0 -1 -10 0 -1.0 0 Collector to Emitter Voltage, VCE(V) Grounded Emitter Output Characteristics -0.2 -0.4 -0.8 -1.6 -2.0 -1.2 -0.4 -0.6 -0.8 IB =0mA Ta=25℃ -0.15mA -0.1mA -0.05mA -50-100-200-500-1000 500 1000 12 5 10 20 5 1 Emitter Current, IE (mA) Collector-emitter Saturation Voltage vs. Collector Current 2 50 100200 5001000 10 20 50 100 Collector to Base Voltage, VCB(V) Collector Output Capacitance vs. Collector -Base Voltage -100 VCE = -5V Ta=25℃ -0.2 -0.6 -1.0 -1.4 -1.8 -0.2mA -0.25mA -0.3mA -0.35mA -0.4mA -0.45mA 20 10 -2000 VcE= -1V VcE= -3V Ta=25℃ -1 -2 -5 -10 -20 -0.2 -0.05 -0.1 -50-100-200-500-1000 -0.5 -0.02 -0.01 -2000 Collector Current, Ic(mA) -1 -2 Ta=25℃ Ic/IB=20 10 200 500 1000 Ta=25℃ VCE = -5V Gain Bandwidth Product vs. Emitter Current -0.1 -0.2 -0.5-1 -2 5 1 2 -5 -10 -20 -50 -100 10 20 50 100 200 500 Ta=25℃ f=1MHz 1000 IE=0A |
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