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2SC5027L-O-TF3-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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2SC5027L-O-TF3-T Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 4 page 2SC5027 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R203-027,C TYPICAL CHARACTERISTICS 4.0 3.6 0.0 0 Static Characteristic Collector Current vs. Collector-Emitter Voltage 1234567 8 9 10 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 IB=150 mA IB=100 mA IB=50mA IB=10mA Saturation Voltage vs. Collector Current Collector Current vs. Base-Emitter Voltage Collector-Emitter Voltage, VCE (V) Base-Emitter Voltage, VBE (V) Collector Current, IC (A) 1ms 100us 10 1 0.1 0.01 0.01 0.1 1 10 4.0 3.5 1.0 0.5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 3.0 2.5 2.0 1.5 0.0 VCE=5V Ic=5IB 1ms 10 1 0.1 0.01 0.1 110 Vcc=400V 5.IB1= - 2.5.IB2=Ic Collector-Emitter Voltage, VCE (V) Switching Time Time vs. Collector -Emitter Voltage VBE(SAT) VCE(SAT) 1E-s 1 10 100 1000 5000 100 10 1 0.1 0.01 IC(MAX)(Continuous ) 10m s Collector-Emitter Voltage, VCE (V) Safe Operating Area Collector Current vs. Collector-Emitter Voltage ICP(MAX ) 1m s 1ms 100us 1000 100 10 1 0.01 0.1 1 10 DC Current Gain vs. Collector Current VCE=5V Collector Current, IC (A) |
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