DTC114T-AE3-6-R datasheet(2/3 Pages) UTC

Part #	DTC114T-AE3-6-R

Description	NPN DIGITAL TRANSISTOR NPN DIGITAL TRANSISTOR

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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DTC114T

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R206-054,B

ABSOLUTE MAXIMUM RATINGS (Ta=25 )

℃

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

50

V

Collector-Emitter Voltage

VCEO

50

V

Emitter-Base Voltage

VEBO

5

V

Collector Current

IC

100

mA

SOT-23/SOT-323

200

mW

Collector Power Dissipation

SOT-523

PC

150

mW

Junction Temperature

TJ

150

℃

Storage Temperature

TSTG

-55 ~ +150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

BVCBO

IC=50μA

50

V

Collector-Emitter Breakdown Voltage

BVCEO

IC=1mA

50

V

Emitter-Base Breakdown Voltage

BVEBO

IE=50μA

5

V

Collector-Emitter Saturation Voltage

VCE(SAT) IC=10mA, IB=1mA

0.3

V

Collector Cut-off Current

ICBO

VCB=50V

0.5

μA

Emitter Cut-off Current

IEBO

VEB=4V

0.5

μA

DC Current Gain

hFE

VCE=5V, IC=1mA

100

300

600

Input Resistance

RIN

7

10

13

kΩ

Current Gain Bandwidth Product

fT

VCE=10V, IE=-5mA, f=100MHz

250

MHz

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