MMBT1015-BL-AN3-R datasheet(2/4 Pages) UTC

Part #	MMBT1015-BL-AN3-R

Description	LOW FREQUENCY PNP AMPLIFIER TRANSISTOR

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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2 / 4 page

MMBT1015

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R206-015,E

ABSOLUTE MAXIMUM RATING ( Ta=25°C , unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-50

V

Collector-Emitter Voltage

VCEO

-50

V

Emitter-Base Voltage

VEBO

-5

V

SOT-23

250

mW

Collector Dissipation

SOT-523/SOT-113/SOT-323

PC

200

mW

Collector Current

IC

-150

mA

Base Current

IB

-50

mA

Junction Temperature

TJ

125

℃

Storage Temperature

TSTG

-55 ~ +150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Base Breakdown Voltage

BVCBO

Ic = -100

µA, I

E = 0

-50

V

Collector-Emitter Breakdown Voltage

BVCEO

Ic = -10mA, IB = 0

-50

V

Emitter-Base Breakdown Voltage

BVEBO

IE = -10µA, Ic = 0

-5

V

Collector-Emitter Saturation Voltage

VCE(SAT) Ic = -100mA, IB = -10mA

-0.1

-0.3

V

Base-Emitter Saturation Voltage

VBE(SAT) Ic = -100mA, IB = -10mA

-1.1

V

Collector Cut-off Current

ICBO

VCB = -50V, IE = 0

-100

nA

Emitter Cut-off Current

IEBO

VEB = -5V, Ic = 0

-100

nA

hFE1

VCE = -6V, Ic = -2mA

120

700

DC Current Gain

hFE2

VCE = -6V, Ic = -150mA

25

Transition Frequency

fT

VCE = -10V, Ic = -1mA

80

MHz

Output Capacitance

COB

VCB = -10V, IE = 0, f = 1MHz

4.0

7.0

pF

Noise Figure

NF

Ic = -0.1mA, VCE = -6V

RG= 1kΩ, f = 100Hz

0.5

6

dB

CLASSIFICATION OF hFE1

RANK

Y

GR

BL

RANGE

120-240

200-400

350-700

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