2SC2655

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R211-013,C

PARAMETER

SYMBOL

RATING

UNIT

Collector-Base Voltage

50

V

Collector-Emitter Voltage

50

V

Emitter-Base Voltage

5

V

Collector Current

Ic

2

A

Collector Current(Pulse)

Icp*

3

A

Base Current

0.5

A

Collector Power Dissipation

Pc

900

mW

Junction Temperature

150

°C

Storage Temperature

-55 ~ +150

°C

Note: * PW

16ms,

≦

Duty Cycle

50%.

≦

1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Emitter Breakdown Voltage

50

V

Collector Cut-off Current

1.0

µA

Emitter Cut-off Current

1.0

µA

70

240

DC Current Gain

40

Collector-Emitter Saturation Voltage

0.5

V

Base- Emitter Saturation Voltage

1.2

V

Transition Frequency

100

MHz

Collector Output Capacitance

Cob

30

pF

Switching Time(Turn-on Time)

20μs

INPUT

OUTPUT

Vcc=30 V

DUTY CYCLE≦1%

0.1

µS

RANK

O

Y

RANGE

70-140

120-240