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2SB649L-B-T92-B Datasheet(PDF) 2 Page - Unisonic Technologies |
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2SB649L-B-T92-B Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 4 page 2SB649/A PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R204-006,D ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO -180 V 2SB649 -120 Collector-Emitter Voltage 2SB649A VCEO -160 V Emitter-Base Voltage VEBO -5 V Collector Current IC -1.5 A Collector Peak Current lC(PEAK) -3 A TO-126/TO-126C 1.4 W TO-92 1 W Collector Power Dissipation SOT-89 PD 500 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector to Base Breakdown Voltage BVCBO IC=-1mA, IE=0 -180 V 2SB649 -120 Collector to Emitter Breakdown Voltage 2SB649A BVCEO IC=-10mA, RBE=∞ -160 V Emitter to Base Breakdown Voltage BVEBO IE=-1mA, IC=0 -5 V Collector Cut-off Current ICBO VCB=-160V, IE=0 -10 µA hFE1 VCE=-5V, IC=-150mA (note) 60 320 2SB649 hFE2 VCE=-5V, IC=-500mA (note) 30 hFE1 VCE=-5V, IC=-150mA (note) 60 200 DC Current Gain 2SB649A hFE2 VCE=-5V, IC=-500mA (note) 30 Collector-Emitter Saturation Voltage VCE(SAT) Ic=-600mA, IB=-50mA -1 V Base-Emitter Voltage VBE VCE=-5V, IC=-150mA -1.5 V Current Gain Bandwidth Product fT VCE=-5V,IC=-150mA 140 MHz Output Capacitance Cob VCB=-10V, IE=0, f=1MHz 27 pF Note: Pulse test. CLASSIFICATION OF hFE RANK B C D RANGE 60-120 100-200 160-320 |
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