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2SD669A-X-T92-B Datasheet(PDF) 3 Page - Unisonic Technologies |
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2SD669A-X-T92-B Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 5 page 2SD669/A NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 5 www.unisonic.com.tw QW-R204-005,E ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 180 V 2SD669 120 Collector-Emitter Voltage 2SD669A VCEO 160 V Emitter-Base Voltage VEBO 5 V Collector Current IC 1.5 A Collector Peak Current lC(PEAK) 3 A Collector Power Dissipation SOT-223 0.5 W Collector Power Dissipation TO-126 PD 1 W Junction Temperature TJ +150 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector to Base Breakdown Voltage BVCBO IC=1mA, IE=0 180 V 2SD669 120 Collector to Emitter Breakdown Voltage 2SD669A BVCEO IC=10mA, RBE=∞ 160 V Emitter to Base Breakdown Voltage BVEBO IE=1mA, IC=0 5 V Collector Cut-off Current ICBO VCB=160V, IE=0 10 µA hFE1 VCE=5V, IC=150mA (Note) 60 320 DC Current Gain hFE2 VCE=5V, IC=500mA (Note) 30 Collector-Emitter Saturation Voltage VCE(SAT) IC=600mA, IB=50mA (Note) 1 V Base-Emitter Voltage VBE VCE=5V, IC=150mA (Note) 1.5 V Current Gain Bandwidth Product fT VCE=5V, IC=150mA (Note) 140 MHz Output Capacitance Cob VCB=10V, IE=0, f=1MHz 14 pF Note: Pulse test. CLASSIFICATION OF hFE1 RANK B C D RANGE 60-120 100-200 160-320 |
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