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MW6S004NT1 Datasheet(PDF) 6 Page - Freescale Semiconductor, Inc

Part # MW6S004NT1
Description  RF Power Field Effect Transistor
Download  13 Pages
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MW6S004NT1 Datasheet(HTML) 6 Page - Freescale Semiconductor, Inc

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6
RF Device Data
Freescale Semiconductor
MW6S004NT1
TYPICAL CHARACTERISTICS
0−70
Pout, OUTPUT POWER (WATTS) AVG.
50
−20
40
−30
30
−40
20
−50
10
−60
0.01
1
10
Gps
ACPR
Figure 8. Single-Carrier CDMA ACPR, Power Gain
and Drain Efficiency versus Output Power
10
14
20
0.01
0
60
TC = −30_C
25
_C
−30
_C
1
19
18
17
16
40
30
20
10
Pout, OUTPUT POWER (WATTS) CW
Figure 9. Power Gain and Drain Efficiency
versus CW Output Power
Gps
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain versus Output Power
IDQ = 50 mA
f = 1960 MHz
VDD = 24 V
7
15
19
06
17
16
18
23
4
12
22
1800
−25
0
S21
f, FREQUENCY (MHz)
Figure 11. Broadband Frequency Response
S11
20
−5
18
16
−10
−15
14
−20
2100
2050
2000
1950
1900
1850
VDD = 28 Vdc
Pout = 2 W CW
IDQ = 50 mA
85
_C
85
_C
8
5
1
VDD = 28 Vdc
IDQ = 50 mA
f = 1960 MHz
28 V
32 V
ηD
0.1
VDD = 28 Vdc, IDQ = 50 mA
f = 1960 MHz, N −CDMA IS−95 (Pilot, Sync,
Paging, Traffic Codes 8 Through 13)
15
0.1
50
ηD
18.5
17.5
16.5
15.5


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