MW6S004NT1

1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

Designed for Class A or Class AB base station applications with frequencies

up to 2000 MHz. Suitable for analog and digital modulation and multicarrier

amplifier applications.

Power Gain — 18 dB

Drain Efficiency — 33%

IMD — -34 dBc

Power Gain — 19 dB

Drain Efficiency — 33%

IMD — -39 dBc

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 4 Watts CW Output

Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• On-Chip RF Feedback for Broadband Stability

• Integrated ESD Protection

• RoHS Compliant

• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

-0.5, +68

Vdc

Gate-Source Voltage

-0.5, +12

Vdc

Storage Temperature Range

- 65 to +150

°C

Operating Junction Temperature

150

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

Case Temperature 76°C, 4 W PEP, Two-Tone

Case Temperature 79°C, 4 W CW

8.8

8.5

°C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

1A (Minimum)

Machine Model (per EIA/JESD22-A115)

A (Minimum)

Charge Device Model (per JESD22-C101)

III (Minimum)

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

Document Number: MW6S004N

Rev. 2, 2/2007

Freescale Semiconductor

Technical Data

MW6S004NT1

1-2000 MHz, 4 W, 28 V

LATERAL N-CHANNEL

RF POWER MOSFET

CASE 466-03, STYLE 1

PLD 1.5

PLASTIC

© Freescale Semiconductor, Inc., 2007. All rights reserved.