2SB1714

Transistors

2/2

Fig.6 Switching time

−12V

Pulsed

0.01

0.1

1

10

1

10

100

1000

10000

tstg

tdon

tf

tr

Electrical characteristics curves

Fig.1 DV current gain

vs. collector current

10

100

1000

0.001

0.01

0.1

1

10

VCE=

−2V

Pulsed

Ta=100 C

Ta=

−40 C

Ta=25 C

0.01

0.1

1

10

0.001

0.01

0.1

1

10

COLLECTOR CURRENT : IC (A)

Fig.2 Collector-emitter saturation voltage

vs. collector current

Pulsed

Ta=25 C

Ta=

−40 C

Ta=100 C

Fig.3 Base-emitter saturation voltage

vs. collectir current

0.1

1

10

0.001

0.01

0.1

1

10

COLLECTOR CURRENT : IC (A)

Ta=25 C

Pulsed

0.1

1

10

0.01

0.1

1

10

Fig.4 Grounded emitter propagation

characteristics

Pulsed

Ta=100 C

Ta=25 C

Ta=

−40 C

10

100

1000

0.01

0.1

1

10

Ta=25 C

−2V

f=100MHz

Fig.5 Gain bandwidth product

vs. emitter curent

100

1000

1

10

0.001

0.1

100

0.01

1

10

Fig.7 Collector output capacitance

vs. collector-base voltage

Emitter input capacitance

vs. emitter-base voltage

Cib

Cob

IC=0A

f=1MHz

Ta=25 C