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BT136E Datasheet(PDF) 2 Page - Unisonic Technologies |
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BT136E Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 5 page UTC BT136E TRIAC UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R401-005,A THERMAL RESISTANCES PARAMETER SYMBOL MIN TYP MAX UNIT Thermal resistance Junction to mounting base Full cycle Half cycle Rth j-mb 3.0 3.7 K/W K/W Thermal resistance Junction to ambient (In free air) Rth j-a 60 K/W ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise stated) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS Gate trigger current IGT VD = 12 V; IT = 0.1 A T2+G+ T2+G- T2-G- T2-G+ 2.5 4.0 5.0 11 10 10 10 25 mA Latching current IL VD = 12 V; IGT = 0.1 A T2+G+ T2+G- T2-G- T2-G+ 3.0 10 2.5 4.0 15 20 15 20 mA Holding current IH VD = 12 V; IGT = 0.1 A 2.2 15 mA On-state voltage VT IT = 5 A 1.4 1.7 V VD = 12 V; IT = 0.1 A 0.7 1.5 V Gate trigger voltage VGT VD = 400V ; IT = 0.1 A; Tj =125°C 0.25 0.4 V Off-state leakage current ID VD = VDRM(max) ; Tj = 125 °C 0.1 0.5 mA DYNAMIC CHARACTERISTICS Critical rate of rise of Off-state voltage dVD /dt VDM = 67% VDRM(max) ; Tj =125°C; exponential waveform; gate open circuit 50 V/µs Gate controlled turn-on time tgt ITM = 6 A; VD= VDRM(max) ; IG=0.1A; dIG/dt=5A/µs 2 µs |
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