MJD210 datasheet(1/5 Pages) UTC

Part #	MJD210

Description	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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UTCMJD210 PNPEPITAXIALPLANARSILICONTRANSISTOR

UTC UNISONIC TECHNOLOGIES CO., LTD. 1

QW-R213-001,A

PNP SILICON DPAK FOR SURFACE

MOUNT APPLICATIONS

DESCRIPTION

The UTC MJD210 is designed for low voltage,

low-power, high-gain audio amplifier applications.

FEATURE

*Collector-Emitter Sustaining Voltage

VCEO(sus) =25V (Min) @ IC =10mA

*High DC Current Gain

hFE =70 (Min) @ IC=500mA

=45 (Min) @ IC=2A

=10 (Min) @ IC=5A

*Lead Formed for Surface Mount Applications in

Plastic Sleeves (No Suffix)

*Straight Lead Version in Plastic Sleeves (“-1” Suffix)

*Lead Formed Version in 16mm Tape and Reel

(“T4” Suffix)

*Low Collector – Emitter Saturation Voltage

VCE(sat) = 0.3V (Max) @ IC =500mA

= 0.75V (Max) @ IC = 2.0 A

*High Current-Gain-Bandwidth Product

fT = 65 MHz (Min) @ IC = 100 mA

*Annular Construction for Low Leakage

ICBO = 100 nA @ Rated VCB

TO-251

1

1: BASE 2: COLLECTOR 3: EMITTER

MAXIMUM RATINGS

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCB

40

V

Collector-Emitter Voltage

VCEO

25

V

Emitter-Base Voltage

VEB

7

V

Collector Current-Continuous

Peak

IC

5

10

A

Base Current

IB

1

A

Total Device Dissipation @ TC=25

°C

Derate above 25

°C

PD

12.5

0.1

W

W/

°C

Total Device Dissipation @ TA=25

°C*

Derate above 25

°C

PD

1.4

0.011

W

W/

°C

Operating and Storage Junction Temperature Range

TJ, Tstg

-65 to +150

°C

THERMAL CHARACTERISTICS

CHARACTERISTIC

SYMBOL

MAX

UNIT

Thermal Resistance, Junction to Case

Junction to Ambient*

RθJC

RθJA

10

89.3

°C/W

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