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BUW11F Datasheet(PDF) 2 Page - NXP Semiconductors |
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BUW11F Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 12 page 1997 Aug 14 2 Philips Semiconductors Product specification Silicon diffused power transistors BUW11F; BUW11AF DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT199 package. APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems. PINNING PIN DESCRIPTION 1 base 2 collector 3 emitter mb mounting base; electrically isolated ook, halfpage 123 MSB012 Front view Fig.1 Simplified outline (SOT199) and symbol. handbook, halfpage 3 2 1 MBB008 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MAX. UNIT VCESM collector-emitter peak voltage VBE =0 BUW11F 850 V BUW11AF 1000 V VCEO collector-emitter voltage open base BUW11F 400 V BUW11AF 450 V VCEsat collector-emitter saturation voltage 1.5 V ICsat collector saturation current BUW11F 3 A BUW11AF 2.5 A IC collector current (DC) see Figs 2 and 4 5 A ICM collector current (peak value) tp < 20 ms; see Fig.2 10 A Ptot total power dissipation Th ≤ 25 °C; see Fig.3 32 W tf fall time resistive load; see Figs 8 and 9 0.8 µs |
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Similar Description - BUW11F |
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