BUW11F datasheet(2/12 Pages) PHILIPS

Part #	BUW11F

Description	Silicon diffused power transistors

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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2 / 12 page

1997 Aug 14

2

Philips Semiconductors

Product speciﬁcation

Silicon diffused power transistors

BUW11F; BUW11AF

DESCRIPTION

High-voltage, high-speed,

glass-passivated NPN power

transistor in a SOT199 package.

APPLICATIONS

• Converters

• Inverters

• Switching regulators

• Motor control systems.

PINNING

DESCRIPTION

1

base

2

collector

3

emitter

mb

mounting base;

electrically isolated

ook, halfpage

123

MSB012

Front view

Fig.1 Simplified outline (SOT199) and symbol.

handbook, halfpage

3

2

1

MBB008

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

VCESM

collector-emitter peak voltage

VBE =0

BUW11F

850

V

BUW11AF

1000

V

VCEO

collector-emitter voltage

open base

BUW11F

400

V

BUW11AF

450

V

VCEsat

collector-emitter saturation voltage

1.5

V

ICsat

collector saturation current

BUW11F

3

A

BUW11AF

2.5

A

IC

collector current (DC)

see Figs 2 and 4

5

A

ICM

collector current (peak value)

tp < 20 ms; see Fig.2

10

A

Ptot

total power dissipation

Th ≤ 25 °C; see Fig.3

32

W

tf

fall time

resistive load; see Figs 8 and 9

0.8

µs

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