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BUW13F Datasheet(PDF) 8 Page - NXP Semiconductors |
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BUW13F Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 16 page 1997 Aug 13 8 Philips Semiconductors Product specification Silicon diffused power transistors BUW13F; BUW13AF Fig.8 Base-emitter and collector-emitter saturation voltages as functions of collector current; typical values. handbook, full pagewidth 0 2.0 MGB915 10−1 102 110 IC (A) VBEsat VCEsat (V) 0.5 1.5 1.0 (1) (2) (3) (4) IC/IB =5. (1) VBE; Tj =25 °C. (2) VBE; Tj = 100 °C. (3) VCE; Tj = 100 °C. (4) VCE; Tj =25 °C. Fig.9 Base-emitter voltage as a function of base current; typical values. handbook, full pagewidth 6 IB (A) 1.6 1.4 0.8 0 VBE (V) MGB912 1.2 1.0 4 2 1 5 3 (1) (2) (3) Tj =25 °C. (1) IC =15A. (2) IC =10A. (3) IC =5A. |
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Similar Description - BUW13F |
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