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8550S-C-AE3-B Datasheet(PDF) 2 Page - Unisonic Technologies |
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8550S-C-AE3-B Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 4 page 8550S PNP SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 of 4 www.unisonic.com.tw QW-R206-002,D ABSOLUTE MAXIMUM RATINGS (Ta = 25℃) PARAMETER SYMBOL RATING UNITS Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -5 V SOT-23 350 mW Collector Dissipation(Ta=25 ) ℃ TO-92 PC 1 W Collector Current IC -700 mA Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta= 25 , ℃ unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO Ic=-100 µA,I E=0 -30 V Collector-Emitter Breakdown Voltage BVCEO Ic=-1mA,IB=0 -20 V Emitter-Base Breakdown Voltage BVEBO IE=-100µA,Ic=0 -5 V Collector Cut-off Current ICBO VCB=-30V,IE=0 -1 uA Emitter Cut-off Current IEBO VEB=-5V,Ic=0 -100 nA hFE1 VCE=-1V,Ic=-1mA 100 hFE2 VCE=-1V,Ic=-150 mA 120 400 DC Current Gain hFE3 VCE=-1V,Ic=-500mA 40 Collector-Emitter Saturation Voltage VCE(SAT) Ic=-500mA,IB=-50mA -0.5 V Base-Emitter Saturation Voltage VBE(SAT) Ic=-500mA,IB=-50mA -1.2 V Base-Emitter Saturation Voltage VBE VCE=-1V,Ic=-10mA -1.0 V Current Gain Bandwidth Product fT VCE=-10V,Ic=-50mA 100 MHz Output Capacitance Cob VCB=-10V,IE=0, f=1MHz 9.0 pF CLASSIFICATION OF hFE2 RANK C D E RANGE 120-200 160-300 280-400 |
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