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BUX84F Datasheet(PDF) 4 Page - NXP Semiconductors |
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BUX84F Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 12 page  1997 Aug 14 4 Philips Semiconductors Product specification Silicon diffused power transistors BUX84F; BUX85F Switching times resistive load (see Fig.7) ton turn-on time ICon = 1 A; IBon = 200 mA; IBoff = −400 mA; VCC = 250 V − 0.2 0.5 µs ts storage time ICon = 1 A; IBon = 200 mA; IBoff = −400 mA; VCC = 250 V − 2 3.5 µs tf fall time ICon = 1 A; IBon = 200 mA; IBoff = −400 mA; VCC = 250 V − 0.4 −µs ICon = 1 A; IBon = 200 mA; IBoff = −400 mA; VCC = 250 V; Tmb =95 °C −− 1.4 µs SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Fig.2 Test circuit for collector-emitter sustaining voltage. andbook, halfpage MGE252 + 50 V 100 to 200 Ω 30 to 60 Hz L 6 V oscilloscope vertical horizontal 1 Ω 300 Ω Fig.3 Oscilloscope display for collector-emitter sustaining voltage. handbook, halfpage MGE239 IC (mA) 250 200 100 0 min VCEOsust VCE (V) |
Similar Part No. - BUX84F |
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Similar Description - BUX84F |
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