1997 Aug 14

5

Philips Semiconductors

Product specification

Silicon diffused power transistors

BUX84F; BUX85F

Fig.4 Collector-emitter saturation voltage as a function of base current; typical values.

handbook, full pagewidth

0.3

IB (A)

4

(1)

3

0

0

VCEsat

(V)

0.05

0.25

MGB908

2

1

0.2

0.1

0.15

(2)

(3)

(4)

Fig.5

Base-emitter saturation voltage as a

function of emitter current; typical values.

handbook, halfpage

0

300

1.0

0.5

MGB904

0.75

100

200

VBEsat

(V)

IB (mA)

(2)

(3)

(1)

Fig.6 DC current gain; typical values.

handbook, halfpage

1

10

1

hFE

IC (A)

10

MGB879

typ