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CAT25C01LI-1.8TE13 Datasheet(PDF) 7 Page - Catalyst Semiconductor |
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CAT25C01LI-1.8TE13 Datasheet(HTML) 7 Page - Catalyst Semiconductor |
7 / 15 page Discontinued Parts 7 CAT25C01, CAT25C02, CAT25C04 Doc. No. 1105, Rev. B © 2005 by Catalyst Semiconductor, Inc. Characteristics subject to change without notice Figure 4. Read Instruction Timing Figure 5. RDSR Instruction Timing Note: Dashed Line= mode (1, 1) – –––– 21 22 SK SI SO 0000001 1 BYTE ADDRESS 0123456789 10 12 13 14 15 16 17 18 19 20 D7 D6 D5 D4 D3 D2 D1 D0 *Please check the instruction set table for address CS OPCODE DATA OUT MSB HIGH IMPEDANCE 11 A7 A6 A5 A4 A3 A2 A1 A0 X=0 for 25010, 25020 ; X=A8 for 25040 Note: Dashed line = mode (1,1)---- X* 0 1 2 345 67 8 10 911 12 13 14 SCK SI DATA OUT MSB HIGH IMPEDANCE OPCODE SO 7 6 5 4 3 2 1 0 CS 00 0 00 1 0 1 After the correct read instruction and address are sent, the data stored in the memory at the selected address is shifted out on the SO pin. The data stored in the memory at the next address can be read sequentially by continuing to provide clock pulses. The internal address pointer is automatically incremented to the next higher address after each byte of data is shifted out. When the highest address is reached, the address counter rolls over to 0000h allowing the read cycle to be continued indefinitely. The read operation is terminated by pulling the CS high. To read the status register, RDSR instruction should be sent. The contents of the status register are shifted out on the SO line. The status register may be read at any time even during a write cycle. Read sequece is illustrated in Figure 4. Reading status register is illustrated in Figure 5. WRITE Sequence The CAT25C01/02/04 powers up in a Write Disable state. Prior to any write instructions, the WREN instruction must be sent to CAT25C01/02/04. The device goes into Write enable state by pulling the CS low and then clocking the WREN instruction into CAT25C01/02/04. The CS must be brought high after the WREN instruction to enable writes to the device. If the write operation is initiated immediately after the WREN instruction without CS being brought high, the data will not be written to the array because the write enable latch will not have been properly set. Also, for a successful write operation the address of the memory location(s) to be programmed must be outside the protected address field location selected by the block protection level. Byte Write Once the device is in a Write Enable state, the user may proceed with a write sequence by setting the CS low, issuing a write instruction via the SI line, followed by the 8-bit address for CAT25C01/02/04 (for the 25C04, bit 3 of the read data instruction contains address A8). Programming will start after the CS is brought high. Figure 6 illustrates byte write sequence. |
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