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MC33153DR2 Datasheet(PDF) 2 Page - ON Semiconductor

Part # MC33153DR2
Description  Single IGBT Gate Driver
Download  13 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC33153DR2 Datasheet(HTML) 2 Page - ON Semiconductor

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MC33153
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Power Supply Voltage
VCC to VEE
Kelvin Ground to VEE (Note 1)
VCC − VEE
KGND − VEE
20
V
Logic Input
Vin
VEE −0.3 to VCC
V
Current Sense Input
VS
−0.3 to VCC
V
Blanking/Desaturation Input
VBD
−0.3 to VCC
V
Gate Drive Output
Source Current
Sink Current
Diode Clamp Current
IO
1.0
2.0
1.0
A
Fault Output
Source Current
Sink Current
IFO
25
10
mA
Power Dissipation and Thermal Characteristics
D Suffix SO−8 Package, Case 751
Maximum Power Dissipation @ TA = 50°C
Thermal Resistance, Junction−to−Air
P Suffix DIP−8 Package, Case 626
Maximum Power Dissipation @ TA = 50°C
Thermal Resistance, Junction−to−Air
PD
RqJA
PD
RqJA
0.56
180
1.0
100
W
°C/W
W
°C/W
Operating Junction Temperature
TJ
+150
°C
Operating Ambient Temperature
TA
−40 to +105
°C
Storage Temperature Range
Tstg
−65 to +150
°C
NOTE:
ESD data available upon request.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Kelvin Ground must always be between VEE and VCC.
ELECTRICAL CHARACTERISTICS (VCC = 15 V, VEE = 0 V, Kelvin GND connected to VEE. For typical values TA = 25°C,
for min/max values TA is the operating ambient temperature range that applies (Note 2), unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
LOGIC INPUT
Input Threshold Voltage
High State (Logic 1)
Low State (Logic 0)
VIH
VIL
1.2
2.70
2.30
3.2
V
Input Current
High State (VIH = 3.0 V)
Low State (VIL = 1.2 V)
IIH
IIL
130
50
500
100
mA
DRIVE OUTPUT
Output Voltage
Low State (ISink = 1.0 A)
High State (ISource = 500 mA)
VOL
VOH
12
2.0
13.9
2.5
V
Output Pull−Down Resistor
RPD
100
200
k
W
FAULT OUTPUT
Output Voltage
Low State (ISink = 5.0 mA)
High State (ISource = 20 mA)
VFL
VFH
12
0.2
13.3
1.0
V
SWITCHING CHARACTERISTICS
Propagation Delay (50% Input to 50% Output CL = 1.0 nF)
Logic Input to Drive Output Rise
Logic Input to Drive Output Fall
tPLH(in/out)
tPHL (in/out)
80
120
300
300
ns
Drive Output Rise Time (10% to 90%) CL = 1.0 nF
tr
17
55
ns
Drive Output Fall Time (90% to 10%) CL = 1.0 nF
tf
17
55
ns
Propagation Delay
Current Sense Input to Drive Output
Fault Blanking/Desaturation Input to Drive Output
tP(OC)
tP(FLT)
0.3
1.0
ms
2. Low duty cycle pulse techniques are used during test to maintain the junction temperature as close to ambient as possible.
Tlow = −40°C for MC33153
Thigh = +105°C for MC33153


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