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MPSH10RLRAG Datasheet(PDF) 2 Page - ON Semiconductor

Part # MPSH10RLRAG
Description  VHF/UHF Transistors NPN Silicon
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MPSH10RLRAG Datasheet(HTML) 2 Page - ON Semiconductor

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MPSH10
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
25
Vdc
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
30
Vdc
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
3.0
Vdc
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0)
ICBO
100
nAdc
Emitter Cutoff Current
(VEB = 2.0 Vdc, IC = 0)
IEBO
100
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 4.0 mAdc, VCE = 10 Vdc)
hFE
60
Collector−Emitter Saturation Voltage
(IC = 4.0 mAdc, IB = 0.4 mAdc)
VCE(sat)
0.5
Vdc
Base −Emitter On Voltage
(IC = 4.0 mAdc, VCE = 10 Vdc)
VBE(on)
0.95
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT
650
MHz
Collector−Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
0.7
pF
Common−Base Feedback Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Crb
0.35
0.65
pF
Collector Base Time Constant
(IC = 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz)
rb’Cc
9.0
ps
ORDERING INFORMATION
Device
Package
Shipping
MPSH10
TO−92
5000 Units / Box
MPSH10G
TO−92
(Pb−Free)
5000 Units / Box
MPSH10RLRA
TO−92
2000 / Tape & Reel
MPSH10RLRAG
TO−92
(Pb−Free)
2000 / Tape & Reel
MPSH10RLRP
TO−92
2000 / Ammo Pack
MPSH10RLRPG
TO−92
(Pb−Free)
2000 / Ammo Pack
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.


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