MTD10N10ELT4G datasheet(3/7 Pages) ONSEMI

Part #	MTD10N10ELT4G

Description	TMOS E?묯ET Power Field Effect Transistor DPAK for Surface Mount

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MTD10N10EL

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TYPICAL ELECTRICAL CHARACTERISTICS

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On−Resistance versus Drain Current

and Temperature

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

Figure 5. On−Resistance Variation with

Temperature

Figure 6. Drain−To−Source Leakage

Current versus Voltage

10

5

0

02

5

3

1

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

VGS = 10 V

7 V

3.5 V

4 V

5 V

TJ = 25°C

5

0

12

3

4

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

VDS ≥ 5 V

−55°C

TJ = 100°C

4

15

20

4.5 V

25°C

15

20

3 V

2 V

10

ID, DRAIN CURRENT (AMPS)

TJ = 25°C

VGS = 5 V

10 V

0.25

0.2

510

15

0.35

0.25

0.15

0.05

05

10

ID, DRAIN CURRENT (AMPS)

VGS = 10 V

TJ = 25°C

100°C

−55°C

0.15

0.1

0

15

20

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

VGS = 0 V

040

60

1

100

20

1

TJ = 125°C

10

100°C

TJ, JUNCTION TEMPERATURE (°C)

VGS = 5 V

ID = 5 A

− 50

0

50

100

150

125

−25

25

75

2

1.5

1

0.5

0

80

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