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MUN5111DW1T1G Datasheet(PDF) 1 Page - ON Semiconductor

Part # MUN5111DW1T1G
Description  Dual Bias Resistor Transistors
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MUN5111DW1T1G Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 6
1
Publication Order Number:
MUN5111DW1T1/D
MUN5111DW1T1 Series
Preferred Devices
Dual Bias Resistor
Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base resistor
and a base−emitter resistor. These digital transistors are designed to
replace a single device and its external resistor bias network. The BRT
eliminates these individual components by integrating them into a single
device. In the MUN5111DW1T1 series, two BRT devices are housed in
the SOT−363 package which is ideal for low−power surface mount
applications where board space is at a premium.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Pb−Free Packages are Available
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted, common for Q1 and Q2)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
−50
Vdc
Collector-Emitter Voltage
VCEO
−50
Vdc
Collector Current
IC
−100
mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25
°C
PD
187 (Note 1)
256 (Note 2)
1.5 (Note 1)
2.0 (Note 2)
mW
mW/
°C
Thermal Resistance,
Junction-to-Ambient
RqJA
670 (Note 1)
490 (Note 2)
°C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25
°C
PD
250 (Note 1)
385 (Note 2)
2.0 (Note 1)
3.0 (Note 2)
mW
mW/
°C
Thermal Resistance,
Junction-to-Ambient
RqJA
493 (Note 1)
325 (Note 2)
°C/W
Thermal Resistance,
Junction-to-Lead
RqJL
188 (Note 1)
208 (Note 2)
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
Preferred devices are recommended choices for future use
and best overall value.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Q1
R1
R2
R2
R1
Q2
(1)
(2)
(3)
(4)
(5)
(6)
http://onsemi.com
SOT−363
CASE 419B
STYLE 1
MARKING DIAGRAM
1
1
6
See detailed ordering and shipping information in the table on
page 2 of this data sheet.
ORDERING INFORMATION
xx
= Device Code (Refer to page 2)
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
xx M
G
G


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