NTGS3441PT1G datasheet(3/6 Pages) ONSEMI

Part #	NTGS3441PT1G

Description	Power MOSFET -20 V, -3.16 A, Single P-Channel TSOP-6

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NTGS3441P

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TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

0

20

8

16

12

10

6

4

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

8

4

0

2

Figure 1. On−Region Characteristics

1

20

16

3

2

12

8

4

0

45

Figure 2. Transfer Characteristics

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

25

0.12

47

0.18

0.06

8

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

0.5

8.5

0.27

9.5

7.5

6.5

0.24

0.21

0.18

0.15

5.5

0.09

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

−ID, DRAIN CURRENT (AMPS)

−50

0

−25

25

1.4

1.2

1

0.8

0.7

50

125

100

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

TJ = 25°C

VGS = −10 V to −4.5 V

−4 V

−3.5 V

−2 V

−2.5 V

−3 V

−1.9 V

0.24

36

TJ = 25°C

TJ = 100°C

TJ = −55°C

ID = −1.5 A

TJ = 25°C

VDS ≥ −10 V

0.30

0.06

75

150

TJ = 25°C

VGS = −2.5 V

VGS = −4.5 V

ID = −1.5 A

VGS = −4.5 V

015

1

20

10

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

100

1000

10

5

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

TJ = 125°C

TJ = 100°C

VGS = 0 V

19

7

5

3

1

0.12

4.5

3.5

2.5

1.5

1.3

1.1

0.9

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