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NTHD4401P Datasheet(PDF) 1 Page - ON Semiconductor |
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NTHD4401P Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2005 November, 2005 − Rev. 4 1 Publication Order Number: NTHD4401P/D NTHD4401P Power MOSFET −20 V, −3.0 A, Dual P−Channel, ChipFET t Features • Low RDS(on) and Fast Switching Speed in a ChipFET Package • Leadless ChipFET Package 40% Smaller Footprint than TSOP−6 • ChipFET Package with Excellent Thermal Capabilities where Heat Transfer is Required • Pb−Free Package is Available Applications • Charge Control in Battery Chargers • Optimized for Battery and Load Management Applications in Portable Equipment • MP3 Players, Cell Phones, Digital Cameras, PDAs • Buck and Boost DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS "12 V Continuous Drain Current (Note 1) Steady State TA = 25°C ID −2.1 A TA = 85°C −1.5 t v 5 s TA = 25°C −3.0 Power Dissipation (Note 1) Steady State TA = 25°C PD 1.1 W TA = 85°C 0.6 t v 5 s TA = 25°C 2.1 Pulsed Drain Current tp = 10 ms IDM −9.0 A Operating Junction and Storage Temperature TJ, Tstg −55 to 150 °C Source Current (Body Diode) IS −2.5 A Lead Temperature for Soldering Purposes (1/8 ″ from case for 10 s) TL 260 °C THERMAL RESISTANCE RATINGS Rating Symbol Value Unit Junction−to−Ambient − Steady State (Note 1) RqJA 110 °C/W Junction−to−Ambient − t v 5 s 60 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq [1 oz] including traces). P−Channel MOSFET Device Package Shipping† ORDERING INFORMATION NTHD4401PT1 ChipFET 3000/Tape & Reel http://onsemi.com S1 G1 D1 P−Channel MOSFET S2 G2 D2 −20 V 200 m W @ −2.5 V 130 m W @ −4.5 V RDS(on) TYP −3.0 A ID MAX V(BR)DSS NTHD4401PT1G ChipFET (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ChipFET CASE 1206A STYLE 2 MARKING DIAGRAM 1 2 3 4 S1 G1 S2 G2 D1 D1 D2 D2 PIN CONNECTIONS 8 7 6 5 5 6 7 81 2 3 4 C4 = Specific Device Code M = Month Code G = Pb−Free Package |
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