NTHD4401P_05 datasheet(1/6 Pages) ONSEMI

Part #	NTHD4401P

Description	Power MOSFET -20 V, -3.0 A, Dual P-Channel, ChipFET

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Manufacturer	ONSEMI [ON Semiconductor]

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November, 2005 − Rev. 4

1

Publication Order Number:

NTHD4401P/D

NTHD4401P

Power MOSFET

−20 V, −3.0 A, Dual P−Channel, ChipFET

t

Features

• Low RDS(on) and Fast Switching Speed in a ChipFET Package

• Leadless ChipFET Package 40% Smaller Footprint than TSOP−6

• ChipFET Package with Excellent Thermal Capabilities where Heat

Transfer is Required

• Pb−Free Package is Available

Applications

• Charge Control in Battery Chargers

• Optimized for Battery and Load Management Applications in

Portable Equipment

• MP3 Players, Cell Phones, Digital Cameras, PDAs

• Buck and Boost DC−DC Converters

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

−20

V

Gate−to−Source Voltage

VGS

"12

V

Continuous Drain

Current (Note 1)

Steady

State

TA = 25°C

ID

−2.1

A

TA = 85°C

−1.5

t

v 5 s

TA = 25°C

−3.0

Power Dissipation

(Note 1)

Steady

State

TA = 25°C

PD

1.1

W

TA = 85°C

0.6

t

v 5 s

TA = 25°C

2.1

Pulsed Drain Current

tp = 10

ms

IDM

−9.0

A

Operating Junction and Storage Temperature

TJ, Tstg

−55 to

150

°C

Source Current (Body Diode)

IS

−2.5

A

Lead Temperature for Soldering Purposes

(1/8

″ from case for 10 s)

TL

260

°C

THERMAL RESISTANCE RATINGS

Rating

Symbol

Value

Unit

Junction−to−Ambient − Steady State (Note 1)

RqJA

110

°C/W

Junction−to−Ambient − t

v 5 s

60

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq

[1 oz] including traces).

P−Channel MOSFET

Device

Package

Shipping†

ORDERING INFORMATION

NTHD4401PT1

ChipFET

3000/Tape & Reel

http://onsemi.com

S1

G1

D1

P−Channel MOSFET

S2

G2

D2

−20 V

200 m

W @ −2.5 V

130 m

W @ −4.5 V

RDS(on) TYP

−3.0 A

ID MAX

V(BR)DSS

NTHD4401PT1G

ChipFET

(Pb−Free)

3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

ChipFET

CASE 1206A

STYLE 2

MARKING

DIAGRAM

1

2

3

4

S1

G1

S2

G2

D1

D2

CONNECTIONS

8

7

6

5

6

7

81

2

3

4

C4 = Specific Device Code

M

= Month Code

G

= Pb−Free Package

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